Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1992-08-06

1994-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437182, 437183, 437192, 437193, 437228, H01L 2144

Patent

active

053087925

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of depositing a metal film for forming interconnections and/or electrodes on an insulating film formed on a substrate and then applying a hydrostatic pressure exceeding atmospheric pressure to the deposited metal film; or comprises the steps of forming a passivation film on a metal film for forming interconnections and/or electrodes, which is formed on a substrate with an insulating film, and then applying a hydrostatic pressure exceeding atmospheric pressure to the passivation film formed. The method makes it possible to substantially improve density and adhesion of the metal film and the insulating film and to produce semiconductor devices equipped with high-quality electrodes or interconnections at a relatively low cost.

REFERENCES:
patent: 4171996 (1979-10-01), Maslov et al.
patent: 4348746 (1982-09-01), Okabayashi et al.
patent: 4551908 (1985-11-01), Nagasawa et al.
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4585491 (1986-04-01), Burnham et al.
patent: 4671846 (1987-06-01), Shimbo et al.
patent: 4939101 (1990-07-01), Black et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2114854