Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1998-02-04

1999-10-19

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438362, 438365, H01L 31331

Patent

active

059703555

ABSTRACT:
A method for fabricating a semiconductor device having a base electrode, an emitter electrode, and a collector electrode, includes the steps of: forming first, second, and buried layers in a semiconductor substrate; forming first, second, and third epitaxial layers using the respective buried layers as seeds; forming an isolation region between the first and second epitaxial layers; forming first, second, and third impurity regions connected to the respective buried layers through the respective epitaxial layers; forming fourth, fifth, and sixth impurity regions in the respective epitaxial layers; forming polysilicon layers on the respective epitaxial layers, respectively; defining first, second, and third emitter electrode regions as well as first, second, and third base contact regions; etching portions of the polysilicon layers excluding the emitter electrode regions and the base contact regions down to a predetermined depth; oxidizing the etched portions of the polysilicon layer to grow an oxide layer; implanting N-type impurity ions into the polysilicon layer of the first and second base contact regions and the third emitter electrode region, and P-type ions into the first and second emitter regions and the third base contact region; depositing a metal on the exposed surfaces; and patterning the metal to be in contact with the respective polysilicon layers.

REFERENCES:
patent: 4866000 (1989-09-01), Okita
patent: 5409843 (1995-04-01), Yamauchi et al.
patent: 5409845 (1995-04-01), Robinson et al.
patent: 5444285 (1995-08-01), Robinson et al.
patent: 5496744 (1996-03-01), Ishimaru

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