Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2009-06-29

2011-10-11

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S430000, C438S637000, C438S672000, C257S522000, C257SE21585

Reexamination Certificate

active

08034693

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming a resist mask having an opening for selectively exposing one of regions between the plurality of wirings, on the insulating film and the plurality of wirings, forming an air gap trench by removing the insulating film from the selectively exposed one of the regions between the plurality of wirings by etching using the resist mask, and forming an air gap in the air gap trench by depositing an inter-layer insulating film over the plurality of wirings after removal of the resist mask.

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