Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-03-31

2010-06-22

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S739000, C257SE21581, C257SE21573, C257SE21585

Reexamination Certificate

active

07741228

ABSTRACT:
After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.

REFERENCES:
patent: 6995439 (2006-02-01), Hill et al.
patent: 7405147 (2008-07-01), Edelstein et al.
patent: 2005/0221600 (2005-10-01), Daamen et al.
patent: 2006-120988 (2006-05-01), None

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