Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-09-28

2010-02-23

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S663000, C438S664000, C438S680000, C438S682000, C257SE21165, C257SE21199, C257SE21438

Reexamination Certificate

active

07666762

ABSTRACT:
A method for fabricating a semiconductor device is provided. A nickel layer is deposited on a semiconductor substrate and plasma-processed. Rapid thermal processing is performed on the plasma-processed nickel layer to form a nickel silicide layer. The portion of the nickel layer that has not reacted with silicon is then removed.

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patent: 10-2003-0101827 (2005-07-01), None

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