Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-12-12

2009-12-08

Porta, David P (Department: 2884)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C438S637000, C257SE21026

Reexamination Certificate

active

07629595

ABSTRACT:
A method for forming a fine photoresist pattern of a semiconductor device, the method comprising the steps of forming a chemically amplified photoresist film over an underlying layer formed over a semiconductor substrate to form a first photoresist pattern; exposing the first photoresist pattern without exposure mask to bake the resulting structure; and flowing the photoresist of the first photoresist pattern to obtain a second photoresist pattern.

REFERENCES:
patent: 6103450 (2000-08-01), Choi
patent: 6255041 (2001-07-01), Oomori et al.
patent: 6472126 (2002-10-01), Traver et al.
patent: 6645851 (2003-11-01), Ho et al.
patent: 2002/0048723 (2002-04-01), Lee et al.
patent: 2005/0153466 (2005-07-01), Choi et al.
patent: 2006/0246382 (2006-11-01), Lee et al.
patent: 1020040001845 (2004-01-01), None
KIPO, Notice of Rejection, Application No. 10-2006-0003919, May 8, 2008.

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