Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-12-30
2009-11-03
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S427000, C257SE21549
Reexamination Certificate
active
07611962
ABSTRACT:
A method for fabricating a semiconductor device can prevent a leakage current and the decrease of threshold voltage by rounding corners of a trench. The method may include the steps of forming a pad insulating layer in a semiconductor substrate defined with an active region and a device isolation region, forming a first trench, forming polymer at inner sidewalls of the first trench, forming a second trench, removing the polymer, forming an oxide layer by thermally oxidizing the semiconductor substrate, and forming insulating layers for device isolation in the first and second trenches.
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Dongbu Electronics Co. Ltd.
Lindsay, Jr. Walter L
McKenna Long & Aldridge LLP
Patel Reema
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