Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-01-23

2007-01-23

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000

Reexamination Certificate

active

10465648

ABSTRACT:
After forming a gate insulating film on a semiconductor substrate, a silicon film is deposited on the gate insulating film, and a high-melting point metal film is deposited on the silicon film. After forming a hard mask made of a silicon oxide film or a silicon nitride film on the high-melting point metal film, the high-melting point metal film is dry etched by using the hard mask as a mask. After removing a residue or a natural oxide film present on the silicon film through dry etching, the silicon film is dry etched by using the hard mask as a mask. The residue or the natural oxide film is removed while suppressing excessive etching of the silicon film.

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Corresponding Japanese Office Action dated Aug. 1, 2006 with English Translation thereof. (JP2002-075967).

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