Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-01-09

2007-01-09

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S239000, C438S694000, C438S749000, C438S757000

Reexamination Certificate

active

10735729

ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device. In more detail of the aforementioned method, a first mask layer covering a cell region is formed on an insulation layer in the cell region. Meanwhile, a second mask layer is formed in a peripheral circuit region with a predetermined distance from the first mask layer. The insulation layer is then etched with use of the first and the second mask layers as an etch mask to form a spacer at both sidewalls of each gate line pattern in the peripheral region and simultaneously form a guard beneath the second mask layer. The first and the second mask layers are removed thereafter. Next, a third mask layer opening the cell region but covering the whole regions including a guard region in the peripheral circuit region is formed. A wet etching process is performed to the insulation layer remaining in the cell region by using the third mask layer as an etch mask.

REFERENCES:
patent: 6380030 (2002-04-01), Chen et al.
patent: 6448141 (2002-10-01), Ahmad et al.
patent: 6468855 (2002-10-01), Leung et al.
patent: 6475847 (2002-11-01), Ngo et al.
patent: 6562679 (2003-05-01), Lee et al.
patent: 6893914 (2005-05-01), Kim et al.

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