Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-09-11

2007-09-11

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S718000, C438S724000

Reexamination Certificate

active

10749909

ABSTRACT:
The present invention relates to a method for forming a storage node contact of a semiconductor device. The method includes the steps of: depositing sequentially a conductive layer, a nitride layer and a polysilicon layer on a substrate having an insulating structure and a conductive structure; etching selectively the polysilicon layer, the nitride layer and the conductive layer to form a plurality of conductive patterns with a stack structure of the conductive layer and a dual hard mask including the polysilicon layer and the nitride layer; forming an insulation layer along a profile containing the conductive patterns; and etching the insulation layer by using a line type photoresist pattern as an etch mask to form a contact hole exposing the conductive structure disposed between the neighboring conductive patterns.

REFERENCES:
patent: 6197630 (2001-03-01), Wu et al.
patent: 6368982 (2002-04-01), Yu
patent: 6566264 (2003-05-01), Cave et al.
patent: 6764893 (2004-07-01), Lee et al.
patent: 6884676 (2005-04-01), Arnold et al.
patent: 2001-076553 (2001-08-01), None
patent: 2002-024735 (2002-04-01), None

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