Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-01-09

2007-01-09

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S681000, C257SE21590, C257SE21584

Reexamination Certificate

active

11131210

ABSTRACT:
A material of low viscosity is applied to a ferroelectric film32formed by MOCVD to form a buried layer34.Then, anisotropic etching is made on the entire surface to remove the tops of convexities on the surface of the ferroelectric film32,and the buried layer34remaining on the surface of the ferroelectric film32is removed. Thus, the surface morphology of the ferroelectric film32is improved and planarized. When the conduction film36and the ferroelectric film32are patterned by photolithography, prescribed patterns as designed can be formed without reflecting the incident exposure light in various directions. The method for fabricating a semiconductor device improves the surface morphology of the ferroelectric film formed by metal organic chemical vapor deposition.

REFERENCES:
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patent: 6699726 (2004-03-01), Hidaka et al.
patent: 6815223 (2004-11-01), Celinska et al.
patent: 2005/0118795 (2005-06-01), Hidaka et al.
patent: 6-32613 (1994-02-01), None
patent: 2002-170938 (2002-06-01), None
patent: 2003-282560 (2003-10-01), None

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