Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-08-08

2006-08-08

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S253000, C438S595000, C438S706000

Reexamination Certificate

active

07087533

ABSTRACT:
A method for fabricating a semiconductor device, wherein a multi-layered hard mask layer having a stacked structure of nitride film/oxide film
itride film is disclosed. The method for fabricating a semiconductor device comprises the steps of: forming a gate insulating film and a conductive layer for gate electrode; forming a multi-layered hard mask layer on the conductive layer, wherein each layer of the multi-layered hard mask layer is formed of materials different from one another; etching the structure to form a stacked structure of a gate insulating film pattern, a gate electrode and a hard mask layer pattern; forming an insulating film spacer; forming an interlayer insulating film on the entire surface; etching the interlayer insulating film to form a landing plug contact hole; forming a conductive layer for landing plug on the entire surface; and planarizing the conductive layer for a landing plug to form a landing plug.

REFERENCES:
patent: 5792687 (1998-08-01), Jeng et al.
patent: 6696365 (2004-02-01), Kumar et al.
patent: 1999-0088491 (1999-12-01), None

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