Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-03-28

2006-03-28

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S720000, C216S058000

Reexamination Certificate

active

07018930

ABSTRACT:
A method for fabricating a semiconductor device capable of minimizing deformations of a photoresist pattern and losses of a hard mask. The method includes the steps of: forming an insulating layer for a hard mask on an etch-target layer; forming a sacrificial layer on the insulating layer; forming a photoresist pattern on the sacrificial layer; forming at least one sacrificial hard mask by etching the sacrificial layer with the photoresist pattern as an etching mask; forming the hard mask by etching the insulating layer with the sacrificial hard mask as an etching mask; and forming a predetermined number of patterns by etching the etch-target layer with use of the sacrificial hard mask and the hard mask as etching masks.

REFERENCES:
patent: 5712185 (1998-01-01), Tsai et al.
patent: 6156486 (2000-12-01), Hattori et al.
patent: 6221745 (2001-04-01), Fan
patent: 6342452 (2002-01-01), Coronel et al.
patent: 6420097 (2002-07-01), Pike et al.
patent: 6433436 (2002-08-01), Feild et al.
patent: 6444542 (2002-09-01), Moise et al.
patent: 6627557 (2003-09-01), Seta et al.
patent: 2002-93741 (2002-03-01), None

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