Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-04-18

2006-04-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S239000, C438S250000, C438S253000, C438S393000

Reexamination Certificate

active

07029984

ABSTRACT:
A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.

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Yoshimasa Horii et al.; “4 Mbit embedded FRAM for high performance System on Chip (SoC) with large switching charge, reliable retention and high imprint resistance”, 2002 IEEE.

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