Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-02-15

2005-02-15

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S431000, C438S692000, C438S706000

Reexamination Certificate

active

06855633

ABSTRACT:
A mask (4) for forming active regions is formed on a surface portion of a Si layer (2) serving as a semiconductor region with a thermal oxide film (3) interposed therebetween. Dummy sidewalls (8) are formed over the side surfaces of the mask (4) for forming active regions. Then, etching is performed by using the mask (4) for forming active regions and the dummy sidewalls (8) as a mask to form trenches (9) each defining the side surfaces of the Si layer (2). Thereafter, each of the trenches (9) is filled with a plasma CVD oxide film (11), which is polished till the dummy sidewalls (8) are exposed at the surface. By removing the dummy sidewalls (8), oxidation is performed with the upper-surface edge portions of the Si layer (2) being exposed. This allows the upper-surface edge portions of the Si layer (2) to be oxidized without involving the oxidation of the lower-surface edge portions of the Si layer (2).

REFERENCES:
patent: 5246537 (1993-09-01), Cooper et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 06-037178 (1994-02-01), None
patent: 11-067891 (1999-03-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3481058