Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-04-05

2005-04-05

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

C438S061000

Reexamination Certificate

active

06875623

ABSTRACT:
In the step of thermally processing a semiconductor substrate by irradiating the semiconductor substrate with lamp light, a free carrier absorption layer for absorbing the irradiated lamp light is provided in advance in the semiconductor substrate. Thus, it is possible to increase the temperature controllability in a low temperature range during an RTP process, and to reduce, at a low cost, variations in the substrate temperature not only in a low temperature range but also in a processing temperature range. As a result, semiconductor devices that require precise thermal processing can be fabricated without degrading the characteristics of the resulting semiconductor devices.

REFERENCES:
patent: 5510271 (1996-04-01), Rohatgi et al.
patent: 5981404 (1999-11-01), Sheng et al.
patent: 6465284 (2002-10-01), Adachi et al.
patent: 6590219 (2003-07-01), Ziger
patent: 63-114135 (1988-05-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3429136