Fishing – trapping – and vermin destroying
Patent
1995-04-17
1996-10-08
Fourson, George
Fishing, trapping, and vermin destroying
437192, 437195, 437245, 437246, H01L 2144
Patent
active
055630979
ABSTRACT:
A method for burying contact holes having different depths at the same time using selective tungsten deposition at the time of fabricating a semiconductor device. The method for fabricating a semiconductor device may include the steps of: forming a first insulation layer on a semiconductor substrate having first conduction lines formed thereon; forming a first contact hole by carrying out a selective etching of a designated part of the first insulation layer; forming a conduction layer over the first insulation layer including the first contact hole for forming a second conduction line; forming a TiN layer on the conduction layer; patterning the TiN layer and the conduction layer with a second conduction line pattern; planarizing the surface of the substrate by forming a second insulation layer on the second conduction line and the first insulation layer; forming second contact holes exposing each of the surfaces of the first conduction line and the second conduction line by carrying out a selective etching of designated parts of the second insulation layer and the first insulation layer; and fully and simultaneously burying each of the second contact holes by carrying out a selective deposition of tungsten exhibiting a time delay on the TiN layer, thereby facilitating simultaneous and easy burial of contact holes having different depths.
REFERENCES:
patent: 4924295 (1990-05-01), Kuecher
patent: 5006484 (1991-04-01), Harada
patent: 5187120 (1993-02-01), Wang
patent: 5342652 (1994-08-01), Foster et al.
patent: 5407698 (1995-04-01), Emesh
Everhart C.
Fourson George
Loudermilk Alan R.
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