Method for fabricating self-stabilized semiconductor gratings

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148DIG72, 148DIG95, 148DIG119, 148 334, 437 90, 437133, 437247, 437972, 372 96, H01L 2120

Patent

active

050231987

ABSTRACT:
A quaternary semiconductor diffraction grating, such as an InGaAsP grating suitable for a DFB laser, is embedded in a semiconductor substrate, such as InP. In one embodiment, the grating is fabricated by

REFERENCES:
patent: 4716132 (1987-12-01), Hirata
patent: 4796274 (1989-01-01), Akiba et al.
patent: 4843032 (1989-06-01), Tokuda et al.
Goldstein et al., "Performance of a Channelled-Substrate-Planar . . . ", Electron. Lett., vol. 23, No. 21, 8th Oct. 1987, pp. 1136-1137.
Logan et al., "Reproducible . . . InGaAsP Buried Heterostructure Lasers", Appl. Phys. Lett., 51(18), 2 Nov. 1987, pp. 1407-1409.
Sato et al., "Defect Generation Due to Surface Corrugation in InGaAsP/InP DFB Lasers . . . ", J. Crys. Growth, 93 (1988), pp. 825-831.
Correc, "Coupling Coefficients for Partially Meltback Tropezoidal Gratings", IEEE J. Quantum Electron, vol. 24, No. 10, Oct. 1988, pp. 1963-1965.
Temkin, "High-Speed Distributed Feedback Lasers Grown by Hydride Epitaxy", Appl. Phys. Lett., 53(13), 26 Sep. 1988, pp. 1156-1158.
Cao, M. et al, "GaInAsP/InP Single-Quantum-Well (SQW) Laser with Wire-Like Active Region Towards Quantum Wire Laser", Electronics Letters, vol. 24, No. 13, Jun. 23, 1988, pp. 824-825.
Takemoto, A. et al, "1.3-.mu.m Distributed Feedback Laser Diode With a Grating Accurately Controlled by a New Fabrication Technique," Optical Fiber Communication Conference, 1989 Technical Digest Series, vol. 5, 6-9 Feb., 1989, Houston, Tex., p. 54.
Miyamoto, Y. et al, "Light Emission from Quantum-Box Structure by Current Injection," Japanese Journal of Applied Physics, vol. 26, No. 4, Apr., 1987, pp. L225-L227.
Takemoto, A. et al, "1.3 .mu.m Distributed Feedback Laser Diode with Grating Accurately Controlled by New Fabrication Technique," Electronics Letters, vol. 25, No. 3, 2 Feb. 1989, pp. 220-221.
Daste, P. et al, "Fabrication Technique for GaInAsP/InP Quantum Wire Structure by LP-MOVPE," Journal of Crystal Growth, vol. 93, pp. 365-369 (1988).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating self-stabilized semiconductor gratings does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating self-stabilized semiconductor gratings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating self-stabilized semiconductor gratings will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-782458

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.