Method for fabricating self-aligned semiconductor devices

Details Method for fabricating self-aligned semiconductor devices Method for fabricating self-aligned semiconductor devices

1990-09-20

1991-10-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437 89, 437 91, 437162, 437909, 437112, 437924, 148DIG27, 148DIG29, 148DIG43, 148DIG124, H01L 2120, H01L 21331

Patent

active

050616447

ABSTRACT:
A method of forming a self-aligned contact to a transistor component located on a semiconductor substrate comprising forming a transistor component opening in a masking layer overlying a semiconductor substrate and using epitaxial lateral overgrowth to form a self-aligned contact, the epitaxial overgrowth beginning in the masking layer opening at an upper surface of the semiconductor substrate and extending normal to and laterally over the masking layer surface.

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