Method for fabricating Schottky barrier tunnel transistor

Details Method for fabricating Schottky barrier tunnel transistor Method for fabricating Schottky barrier tunnel transistor

2007-10-31

2010-06-29

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Forming schottky junction

C438S582000, C257SE21450, C257SE21616

Reexamination Certificate

active

07745316

ABSTRACT:
Provided is a method for fabricating a Schottky barrier tunnel transistor (SBTT) that can fundamentally prevent the generation of a gate leakage current caused by damage of spacers formed on both sidewalls of a gate electrode. The method for fabricating a Schottky barrier tunnel transistor, which includes: a) forming a silicon pattern and a sacrificial pattern on a buried oxide layer supported by a support substrate; b) forming a source/drain region on the buried oxide layer exposed on both sides of the silicon pattern, the source/drain region being formed of a metal layer and being in contact with both sidewalls of the silicon pattern; c) removing the sacrificial pattern to expose the top surface of the silicon pattern; and d) forming a gate insulating layer and a gate electrode on the exposed silicon pattern.

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“Suppression of Leakage Current in Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors” L.E. Calvet et al., Journal of Applied Physics, vol. 91, No. 2, pp. 757-759, Jan. 15, 2002.

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