Method for fabricating reverse-staggered thin-film transistor

Details Method for fabricating reverse-staggered thin-film transistor Method for fabricating reverse-staggered thin-film transistor

1995-04-20

1996-10-01

Quach, T. N.

Fishing, trapping, and vermin destroying

437101, 437233, H01L 21336, H01L 2120

Patent

active

055610749

ABSTRACT:
A method for a thin-film transistor employed as a liquid crystal display includes the steps of selectively forming a gate electrode on a substrate, covering the gate electrode and the substrate with a gate insulating film, forming a semiconductor channel layer on the gate insulating film, forming on the channel layer a semiconductor contact layer of a first conductivity type having first, second and third portions, forming source and drain electrodes respectively on the first and second portions of the contact layer, removing the third portion of the contact layer to expose a part of the channel layer, and forming a semiconductor region of a second conductivity type at the part of the channel layer.

REFERENCES:
patent: 4882295 (1989-11-01), Czubatyj et al.
patent: 4916090 (1990-04-01), Motai et al.
patent: 5053354 (1991-10-01), Tanaka et al.
patent: 5114869 (1992-05-01), Tanaka et al.
patent: 5124272 (1992-06-01), Saito et al.
patent: 5270224 (1993-12-01), Furumura et al.
patent: 5340758 (1994-08-01), Wei et al.

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