Method for fabricating recess pattern in semiconductor device

Details Method for fabricating recess pattern in semiconductor device Method for fabricating recess pattern in semiconductor device

2011-01-04

2011-01-04

Duda, Kathleen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

C430S311000, C430S313000

Reexamination Certificate

active

07862991

ABSTRACT:
A method for fabricating a recess pattern in a semiconductor device includes forming a photoresist layer over a substrate including active regions, performing a first photo-exposure process on the photoresist layer using a photo mask including repeatedly formed line structures and spaces, performing a second photo-exposure process on the photoresist layer using a photo mask exposing the active regions, performing a developing process on regions of the photoresist layer whereon both the first and second photo-exposure processes are performed, and etching the substrate to form recess patterns using the remaining photoresist layer.

REFERENCES:
patent: 2003/0148220 (2003-08-01), Yang
patent: 1020060064891 (2006-06-01), None

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