Method for fabricating read-only-memory devices with self-aligne

Details Method for fabricating read-only-memory devices with self-aligne Method for fabricating read-only-memory devices with self-aligne

1995-07-26

1996-07-16

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 45, 437984, H01L 218246

Patent

active

055366694

ABSTRACT:
A method for fabricating ROM devices with self-aligned code implants comprises the steps of: forming an oxide layer over a silicon substrate; forming a plurality of deposition selecting strips over the oxide layer; forming a dielectric between the plurality of deposition selecting strips to thereby produce a plurality of dielectric strips; removing the deposition selecting strips; forming a number of code diffusion regions in the silicon substrate; and forming a plurality of word lines between the plurality of dielectric strips. Since the code diffusion regions are formed by implanting ions through the dielectric strips, the shielding of the dielectric strips can prevent the outspreading of impurities due to code mask mis-alignment. Therefore, the positions of code diffusion regions can be well controlled beneath the word lines.

REFERENCES:
patent: 5200355 (1993-04-01), Choi et al.
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5449632 (1995-09-01), Hong

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