Fishing – trapping – and vermin destroying
Patent
1994-11-07
1995-09-26
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437 90, 437129, H01L 2120
Patent
active
054533988
ABSTRACT:
Disclosed is a fabricating method of a quantum wire laser diode, comprising the steps of preparing a GaAs substrate; sequentially forming n-type epitaxial layers and a first photoresist layer on the GaAs substrate; removing a portion of the intrinsic GaAs layer by using a first etching solution, and then removing the photoresist layer; wet-etching away a portion of the intrinsic AlAs layer in the vicinity of the opening by using a second etching solution; growing a quantum structure in the molecular beam epitaxy apparatus to form a multiple quantum well on the intrinsic GaAs layer and form a quantum wire on the n-type energy band slope layer through the opening; removing the quantum well, the intrinsic GaAs layer and the intrinsic AlAs layer simultaneously by using a third etching solution; sequentially forming a p-type energy band slope layer, a p-type cladding layer and a p.sup.+ -GaAs layer, on the n-type energy band slope layer and the quantum wire, and forming a second photoresist layer having a predetermined pattern on the p.sup.+ -GaAs layer; removing the layers laminated on the n-type resistive contact layer using the second photoresist layer patterned thus as an etching mask and then removing the second photoresist layer; and forming an n-type ohmic contact metal on the n-type resistive contact layer and a p-type ohmic contact metal on the p.sup.+ -GaAs layer. By this method, because a quantum well formed near to a quantum wire therein is simultaneously removed during removal of other epitaxial layers, another etching process is not required for removing only the quantum well.
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Kim Bo-Woo
Lee Hae-Gwon
Lee Jae-Jin
Breneman R. Bruce
Electronics and Telecommunications Research Institute
Fleck Linda J.
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