Method for fabricating polysilicon liquid crystal display...

Details Method for fabricating polysilicon liquid crystal display... Method for fabricating polysilicon liquid crystal display...

2007-06-26

2007-06-26

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257S061000

Reexamination Certificate

active

11002649

ABSTRACT:
A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region on the first amorphous silicon layer; crystallizing the first and second silicon layers; forming an active layer by patterning the crystallized silicon layers; forming a first insulating layer on the active layer; forming a gate electrode on the first insulating layer; forming source and drain electrodes electrically connected to the active layer; and forming a pixel electrode electrically connected to the drain electrode.

REFERENCES:
patent: 5953595 (1999-09-01), Gosain et al.
patent: 6455874 (2002-09-01), Park et al.
patent: 6537864 (2003-03-01), Aya et al.

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