Method for fabricating polycrystalline silicon wafer

Details Method for fabricating polycrystalline silicon wafer Method for fabricating polycrystalline silicon wafer

1982-04-29

1985-12-31

Bernstein, Hiram H.

Metal founding

Process

Shaping liquid metal against a forming surface

156DIG64, 156616R, 136261, 427240, B22D 1300

Patent

active

045614865

ABSTRACT:
A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.

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patent: 4267212 (1981-05-01), Sakawaki
patent: 4357200 (1982-11-01), Grabmaier
Crystals, J. Dictl et al., V5 Silicon Springer-Verlag 1981.

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