Method for fabricating polycrystalline silicon having micro roug

Details Method for fabricating polycrystalline silicon having micro roug Method for fabricating polycrystalline silicon having micro roug

1994-01-06

1998-03-03

Niebling, John

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438964, H01L 21205

Patent

active

057233799

ABSTRACT:
A method for fabricating a polycrystalline silicon having a roughed surface, which is useful for a capacitor electrode is disclosed. The method is featured by depositing a polycrystalline silicon layer in such a manner that grains of silicon are caused at the surface of the polycrystalline silicon layer. The polycrystalline silicon layer thus obtained has a large effective area and is suitable for a capacitor electrode because of its increased effective surface area.

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