Fishing – trapping – and vermin destroying
Patent
1995-02-06
1996-03-19
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437154, 437958, H01L 3118
Patent
active
055003761
ABSTRACT:
A method of forming a planar photosensitive device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of p type wells in the block surrounded by a foundation of n type semiconductor material. Each p type well corresponds to an APD pixel and is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the p type material in the well and the n type material foundation. Each APD pixel further comprises depletion layer profile modification means such that the peak surface electric field of the p-n junction in each well is substantially less than the bulk electric field of the same p-n junction. One type of depletion layer profile modification means is an peripheral doped region of p material disposed around each respective well; an alternative depletion layer profile modification means is a respective isolation moat around each well so as to separate p type material in the well from n type material in the foundation except along a parallel plane segment of the p-n junction.
REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4142200 (1979-02-01), Mizushima et al.
patent: 4458260 (1984-07-01), McIntyre et al.
patent: 4761383 (1988-08-01), Matsushima et al.
patent: 5021854 (1991-06-01), Huth
patent: 5049962 (1991-09-01), Huang et al.
patent: 5098851 (1992-03-01), Ito et al.
patent: 5343055 (1994-08-01), Davis et al.
V. L. Gelezunas et al., "Uniform Large-Area High-Gain Silicon Avalanche Radiation Detectors From Transmutation doped Silicon," American Institute of Physics, 1977, pp. 118-120.
Sze, S. M. "Physics of Semiconductor Devices," John Wiley, New York, 1981, pp. 783-787.
Castleberry Donald E.
Ishaque Ahmad N.
Chaudhari Chandra
General Electric Company
Ingraham Donald S.
Snyder Marvin
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