Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-04-18
2010-10-19
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S151000, C438S158000, C257SE33065, C257SE21002
Reexamination Certificate
active
07816159
ABSTRACT:
A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.
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Fang Kuo-Lung
Huang Ming-Yuan
Jan Shiun-Chang
Liao Ta-Wen
Lin Han-Tu
Au Optronics Corporation
Jianq Chyun IP Office
Monbleau Davienne
Mulcare Shweta
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