Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-08-02
2011-08-02
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S029000, C438S034000, C438S038000, C438S042000, C438S043000, C438S149000, C438S151000, C438S158000, C438S164000
Reexamination Certificate
active
07989243
ABSTRACT:
A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.
REFERENCES:
patent: 5919532 (1999-07-01), Sato et al.
patent: 7041522 (2006-05-01), Tanaka et al.
patent: 7180559 (2007-02-01), Chang et al.
patent: 7439089 (2008-10-01), Kim
patent: 7525624 (2009-04-01), Kim
patent: 7645649 (2010-01-01), Lai et al.
patent: 2002/0089615 (2002-07-01), Sakamoto et al.
patent: 2004/0266041 (2004-12-01), Kim
patent: 2006/0006385 (2006-01-01), Park
patent: 2006/0186411 (2006-08-01), Kim et al.
patent: 2007/0109467 (2007-05-01), Chang et al.
patent: 1716062 (2006-01-01), None
patent: 101149541 (2008-03-01), None
patent: 101197332 (2008-06-01), None
“1st Office Action of China counterpart application”, issued on Jul. 24, 2009, p. 1-p. 7.
“3rd Office Action of China Counterpart Application”, issued on Jun. 28, 2010, p. 1-p. 7, in which the listed reference was cited.
Chang Chia-Ming
Chang Jun-Kai
Chiang Chun-Yi
Chou Han-Tang
Hsiao Hsiang-Chih
Au Bac H
Au Optronics Corporation
Jianq Chyun IP Office
Picardat Kevin M
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