Method for fabricating pixel cell of CMOS image sensor

Details Method for fabricating pixel cell of CMOS image sensor Method for fabricating pixel cell of CMOS image sensor

2011-08-02

2011-08-02

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S060000, C438S200000, C438S237000, C438S238000

Reexamination Certificate

active

07989252

ABSTRACT:
The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielectric layer on the surface of the semiconductor substrate in the region II; forming a poly-silicon gate on the surface of the semiconductor substrate in the region II; forming a deep doped well in the region I through an ion implantation with high energy; performing an ion implantation with low energy in the region I and an ion implantation for lightly doped source/drain in the region II simultaneously; and forming source/drain regions in the semiconductor substrate in the region II.

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