Method for fabricating photo mask

Details Method for fabricating photo mask Method for fabricating photo mask

2007-12-05

2010-11-23

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C430S312000

Reexamination Certificate

active

07838179

ABSTRACT:
In a method for fabricating a photo mask, first resist patterns are formed on a transparent substrate where a light blocking layer and a phase shift layer are formed. Line widths of the first resist patterns are measured to define a region requiring a line width correction. Second resist patterns exposing the defined region are formed on the first resist patterns. The line width of the light blocking layer is corrected by over-etching the exposed light blocking layer to a predetermined thickness. The second resist patterns are removed. Phase shift patterns and light blocking patterns are formed using the first resist patterns as an etch mask. Then, the first resist patterns are removed.

REFERENCES:
patent: 6506534 (2003-01-01), Nozaki et al.
patent: 2003/0068563 (2003-04-01), Hong et al.
patent: 2004/0081896 (2004-04-01), Pierrat
patent: 2006/0019174 (2006-01-01), Ahn et al.
patent: 10-2000-0044948 (2000-07-01), None
patent: 10-2002-0001232 (2002-01-01), None
patent: 10-2005-0063323 (2005-06-01), None

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