Method for fabricating phase shifting mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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058915966

ABSTRACT:
A method for fabricating a phase shifting mask includes the steps of: forming a light shielding layer on a light transmitting substrate; forming a first mask on the light shielding layer; forming plural openings in the light shielding layer through to the substrate by patterning the light shielding layer using the first mask; forming a second mask layer on the light transmitting substrate and on the first mask layer pattern; patterning the second mask layer to form a second mask that exposes selected ones of the openings in the light shielding layer; and forming a phase shifting region in the light transmitting substrate using the first and second masks. The method prevents the light shielding layer from being damaged by the etching process that forms the phase shifting region, and makes it possible to transfer a pattern accurately, thus achieving a phase shifting mask having high reliability.

REFERENCES:
patent: 5358808 (1994-10-01), Nitayama et al.
patent: 5376483 (1994-12-01), Rolfson
patent: 5403682 (1995-04-01), Lin
Imai et al, "KrF excimer laser lithography for gigabit-scale DRAM" Microlithography World, Aug. 1994, pp. 15-19.
Luehrmann et al., "0.35-.mu.m Lithographpy Using Off-Axis Illumination" Microlithography World, Jan. 1994, pp. 15-19.

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