Method for fabricating phase mask of photolithography process

Details Method for fabricating phase mask of photolithography process Method for fabricating phase mask of photolithography process

2006-03-07

2006-03-07

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S323000

Reexamination Certificate

active

07008729

ABSTRACT:
First of all, a substrate applied in the lithography process is provided, and then a high transmission attenuate layer (HTAL) is formed on the substrate. Then an opaque layer is formed on the high transmission attenuate layer (HTAL), and then an ion-implanting process is performed in the high transmission attenuate layer (HTAL). Afterward, the opaque layer is etched to define a first phase region and a second phase region on the high transmission attenuate layer (HTAL). Subsequently, a photoresist layer is formed on the second phase region and the opaque layer to expose a partial surface of the high transmission attenuate layer (HTAL) that is located the first phase region. Then the partial surface of the high transmission attenuate layer (HTAL) that is located on the first phase region is etched through until a predetermined depth in the substrate. Finally, removing the photoresist layer is to form a phase shifted region in the etched region and a phase unshifted region in the unetched region, whereby a phase mask that can make uniform exposure intensity is obtained by this invention.

REFERENCES:
patent: 5403682 (1995-04-01), Lin
patent: 5503951 (1996-04-01), Flanders et al.

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