Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1974-12-23
1976-06-15
Tupman, W.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29576W, 357 52, B01J 1700
Patent
active
039627799
ABSTRACT:
A method of making an oxide isolated integrated circuit structure is simplified by forming a first level metallization pattern without the conventional underlying insulating layer and without the need for restricting the size of the metallization to the size of the semiconductor regions to be contacted. Portions of the first level metallization pattern can extend on the oxide isolation region to contact two otherwise isolated semiconductor zones. Additionally, subsequent to the formation of the oxide isolation regions and the first level metallization, an intermediate dielectric masking pattern is formed so the combination of the first level metallization, the oxide isolation regions and the masking pattern defines zones for the introduction of impurities. Further, the masking pattern alone is used to provide contact holes for a subsequently formed second level metallization pattern.
REFERENCES:
patent: 3237271 (1966-03-01), Arnold
patent: 3534234 (1970-10-01), Clevenger
patent: 3648125 (1972-03-01), Peltzer
patent: 3758943 (1973-09-01), Shibata
Edwards Roger
Evans William Joshua
Grant Wesley Norman
Murphy Bernard Thomas
Abolins P.
Bell Telephone Laboratories Incorporated
Canepa L. C.
Torsiglieri A. J.
Tupman W.
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