Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1998-11-19
2000-09-26
Niebling, John F.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 47, 438 37, 438931, 438954, 372 43, 257 72, 257102, H01L 2100
Patent
active
061241474
ABSTRACT:
The present invention relates to a semiconductor device and, more particularly, to a short-wavelength optoelectronic device and a method for fabricating the same. The optoelectronic device according to the present invention doesn't have to employ an ion implantation process and an ohmic contact to make the n-p junction in the WB compound semiconductor, providing a sufficient efficiency for display. The method according to the present invention comprises the step of a) forming a SiC:AlN super lattice multilayer by alternately forming a SiC epitaxial film and an AlN epitaxial film on a substrate, wherein the AlN film is formed and the SiC film is formed using a single source gas of 1,3disilabutane in an nitrogen plasma-assisted metalorganic molecular beam epitaxy system; and b) applying a thermal treatment to the SiC:AlN super lattice multilayer, thereby a mixed crystal compound having (SiC).sub.x (AlN).sub.1-x quantum wells obtained by a diffusion of SiC film and AlN.
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Cho Kyoung Ik
Paek Mun Cheol
Shim Kyu Hwan
Electronics and Telecommunications Research Institute
Niebling John F.
Simkovic Viktor
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