Method for fabricating optoelectronic device in low-temperature

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

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438 47, 438 37, 438931, 438954, 372 43, 257 72, 257102, H01L 2100

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active

061241474

ABSTRACT:
The present invention relates to a semiconductor device and, more particularly, to a short-wavelength optoelectronic device and a method for fabricating the same. The optoelectronic device according to the present invention doesn't have to employ an ion implantation process and an ohmic contact to make the n-p junction in the WB compound semiconductor, providing a sufficient efficiency for display. The method according to the present invention comprises the step of a) forming a SiC:AlN super lattice multilayer by alternately forming a SiC epitaxial film and an AlN epitaxial film on a substrate, wherein the AlN film is formed and the SiC film is formed using a single source gas of 1,3disilabutane in an nitrogen plasma-assisted metalorganic molecular beam epitaxy system; and b) applying a thermal treatment to the SiC:AlN super lattice multilayer, thereby a mixed crystal compound having (SiC).sub.x (AlN).sub.1-x quantum wells obtained by a diffusion of SiC film and AlN.

REFERENCES:
patent: 4382837 (1983-05-01), Rutz
patent: 4489128 (1984-12-01), Rutz
patent: 4908539 (1990-03-01), Meyer
patent: 5127990 (1992-07-01), Pribat et al.
patent: 5281831 (1994-01-01), Uemoto et al.
patent: 5326992 (1994-07-01), Yoder
patent: 5385862 (1995-01-01), Moustakas
patent: 5787104 (1998-07-01), Kamiyama et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 6023077 (2000-02-01), Iyechika et al.
Ivor Brodie et al., "Vacuum Microelectronic Devices", Proceedings of the IEEE, vol. 82, No. 7, Jul. 1994, pp. 1006-1034.
H.S. Kong et al., "Chemical Vapor Deposition and Characterization of 6H-SiC Thin Films on Off-axis 6H-SiC Substrates", J. Appl. Phys. 64(5), Sep. 1, 1988, pp. 2672-2679.
John A. Edmond et al., Blue LEDs, UV Photodiodes and High-temperature Rectifiers in 6H-SiC, 1993--Elsevier Science Publishers B.V., pp. 453-460.

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