Method for fabricating optical semiconductor device

Details Method for fabricating optical semiconductor device Method for fabricating optical semiconductor device

1996-04-01

1998-05-26

Picardat, Kevin

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

438 24, H01L 2120

Patent

active

057563730

ABSTRACT:
In a fabricating method of an optical semiconductor device, a pair of SiO.sub.2 films are formed on an n-InP substrate so as to have a large width in a region I (laser region) and a small width in a region II (optical waveguide region) and have the same gap interval therebetween in the regions I and II, and then an InGaAsP optical guide layer, a MQW (multiquantum well) active layer comprising InGaAsP quantum well layers and InGaAsP barrier layers, and a p-InP layer are selectively grown by MOVPE (metal-organic vapor phase epitaxial growth) method, whereby compressive lattice strain is introduced in the InGaAsP quantum well layers of the region I, and tensile lattice strain is introduced in the InGaAsP quantum well layers of the region II.

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Sasaki et al, "Optical Quantum Device Research Forum of Institute of Electrical Engineers", WDM, Document No. 0QD-90-64, Dec. 12, 1990.
Masahiro Aoki et al, "InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993.

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