Metal treatment – Compositions – Heat treating
Patent
1979-02-05
1980-10-21
Massie, Jerome W.
Metal treatment
Compositions
Heat treating
136261, 148187, 156643, 156646, 156647, 156662, 204192E, H01L 2122, H01L 21306
Patent
active
042292336
ABSTRACT:
A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.
REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3971684 (1976-07-01), Muto
patent: 4029518 (1977-06-01), Matsutani et al.
patent: 4094732 (1978-06-01), Reinberg
patent: 4101351 (1978-07-01), Shah et al.
patent: 4104086 (1978-08-01), Bondur et al.
Hudson, "Ion Beam Texturing", J. Vac. Sci. Technology, _vol. 14, No. 1, Jan./Feb. 1977, pp. 286-289.
Berg et al., "Surface . . . Etching", J. Vac. Sci. Technology, vol. 13, No. 1, Jan./Feb. 1976, pp. 403-405.
Hovel, Semiconductors and Semimetals, vol. II, _Solar Cells, Academic Press, N.Y., pp. 225-230, (1975).
Schiable et al., "Reactive Ion . . . Silicon", IBM Technical Disclosure Bull., vol. 21, No. 7, Dec. 1978, pp. 2814-2815.
Logan et al., "Method . . . Devices", IBM Technical Disclosure Bull., vol. 21, No. 4, (Sep. 1978), pp. 1466-1467.
Hansen Thomas A.
Johnson, Jr. Claude
Wilbarg Robert R.
Bunnell David M.
Galvin Thomas F.
International Business Machines - Corporation
Massie Jerome W.
LandOfFree
Method for fabricating non-reflective semiconductor surfaces by does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating non-reflective semiconductor surfaces by , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating non-reflective semiconductor surfaces by will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2021259