Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2005-07-12
2005-07-12
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
Reexamination Certificate
active
06916674
ABSTRACT:
The present invention discloses a method for fabricating multiple-thickness insulator layers via strain field generated by stress. The strain field is used for alternating a develop mechanism of insulator layers on the quantum dots. By forming the multiple-thickness insulator layers at various developing rates, not only leakage current is prevented, but also components are kept isolated in the nano-electronics components. In nano-electronics manufacturing, the method for fabricating multiple-thickness insulator layers results in both better product reliability and the yield rate. It is potential for integral circuit manufacturing.
Chen Pang-Shiu
Hsu Buo-Chin
Liu Chee-Wee
Bacon & Thomas PLLC
Harrison Monica D.
Industrial Technology Research Institute
Thompson Craig A.
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