Method for fabricating MOSFET-controlled FEA

Details Method for fabricating MOSFET-controlled FEA Method for fabricating MOSFET-controlled FEA

1997-09-27

2000-06-13

Saadat, Mahshid

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

438 20, 438 22, 438 23, 438 28, H01L 2100

Patent

active

060748877

ABSTRACT:
The present invention is directed to fabricating a MOSFET-controlled FEA, in which the emitter array and the cathode electrode are separated and connected to each other by a MOSFET, the cathode electrode and the n-well beneath the emitter array thereby being used as a source and a drain of the MOSFET.

REFERENCES:
patent: 5359256 (1994-10-01), Gray
patent: 5651713 (1997-07-01), Lee et al.
patent: 5731597 (1998-03-01), Lee et al.
patent: 5780318 (1998-07-01), Hirano et al.
patent: 5872019 (1999-02-01), Lee et al.
patent: 5910701 (1999-06-01), Takemura

Affiliated with

Also associated with

Rating

Method for fabricating MOSFET-controlled FEA does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating MOSFET-controlled FEA, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating MOSFET-controlled FEA will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2067761