Fishing – trapping – and vermin destroying
Patent
1994-01-24
1995-05-09
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437950, 437913, H01L 21225
Patent
active
054139570
ABSTRACT:
A method for fabricating an MOS transistor having a source/drain region of shallow junction and a thin silicide film is disclosed.
The present method taking advantage of the phase separation of a titanium nitride is capable of forming a thin silicide film in one metal heat treatment process and thus, simplifying the processes as compared with conventional methods employing two heat treatments. In addition, the consumption of a source/drain region is minimized, so that a titanium silicide film suitable to shallow junction can be obtained, preventive of the increase of contact resistance. Further, the improvement of device characteristic are also attributed to the lack of metal bridge, which results from the function of the phase separation phenomenon preventing the formation of the metal bridge in spite of the heat treatment of high temperature. Furthermore, since the source/drain region is formed at an acceleration energy of not less than 30 KeV by employing a common ion-implanting apparatus, the present invention has significant advantages over the conventional methods, including the parasitic resistance such as the area resistance of the junction and the device characteristics.
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Paper entitled "Ultra Shallow Junction Formation Using Diffusion From Silicides: I. Silicide Formation, Dopant Implantation and Depth Profiling" by H. Jiang, C. M. Osburn, P. Smith, Z. G. Xiao, D. Griffis, G. McGuire, and G. A. Rozgonyi, published Jan. 1992 in J. Electrochem. Soc., vol. 139, No. 1.
Chaudhuri Olik
Goldstar Electron Co. Ltd.
Mulpuri S.
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