Method for fabricating MOMOM tunnel emission transistor

Details Method for fabricating MOMOM tunnel emission transistor Method for fabricating MOMOM tunnel emission transistor

1986-05-15

1987-09-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG43, 437245, H01L 2102

Patent

active

046929975

ABSTRACT:
An MOMOM semiconductor device (72) has a plurality of mesa stacked horizontal layers including at least one metal layer (75) having an exposed edge at a generally vertical side (86) of the mesa. An oxide layer (76) is formed on the exposed edge of the metal layer. A second metal layer (77) extends along the side of the mesa over the first oxide layer. A second oxide layer (78) is formed on the second metal layer, and a third metal layer (79) is formed on the second oxide layer. An MOMOM tunnel emission transistor is provided by emitter metal (75) - oxide (76) - base metal (77) - oxide (78) - collector metal (79).

REFERENCES:
patent: 3155886 (1964-11-01), Pankove
patent: 3331998 (1967-07-01), Zuleeg
patent: 3366519 (1968-01-01), Pritchard, Jr.
patent: 3397446 (1968-08-01), Sharp
patent: 3493767 (1970-02-01), Cohen
patent: 3500142 (1970-03-01), Kahng
patent: 4549194 (1985-10-01), Calviello
patent: 4633278 (1986-12-01), Lade et al.
Ghandhi, "ULSI Fabrication Principles", John Wiley & Sons, N.Y., 83, p. 570.

Affiliated with

Also associated with

Rating

Method for fabricating MOMOM tunnel emission transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating MOMOM tunnel emission transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating MOMOM tunnel emission transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1376728