Method for fabricating MNOS structures utilizing hydrogen ion im

Details Method for fabricating MNOS structures utilizing hydrogen ion im Method for fabricating MNOS structures utilizing hydrogen ion im

1982-11-22

1984-05-08

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 29576T, 148187, 357 91, H01L 754, H01L 21263

Patent

active

044472722

ABSTRACT:
An improved method for reducing the density of electronic trapping states and fixed insulator charge in the thin oxide layer of an MNOS structure. The method includes the steps of implanting hydrogen ions in field region of the oxide layer and annealing the MNOS structure at 400.degree. C. to cause the ions to diffuse laterally into the gate region of the oxide layer.

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