Method for fabricating microwave semiconductor integrated circui

Details Method for fabricating microwave semiconductor integrated circui Method for fabricating microwave semiconductor integrated circui

1997-01-24

1997-12-16

Picardat, Kevin

Fishing, trapping, and vermin destroying

437204, 437215, 437216, H01L 2170

Patent

active

056984626

ABSTRACT:
A method of fabricating a microwave semiconductor integrated circuit includes fabricating an integrated circuit including an FET and a wiring surrounding the FET on the front surface of the substrate; forming an insulating film covering a first region of the substrate where the FET is fabricated and a second region of the substrate where the wiring is fabricated; forming a thin resist film on the insulating film covering the first region of the substrate; removing a portion of the insulating film from the second region of the substrate opposite the wiring; forming a metal film containing a gas, covering the thin resist film and contacting, at a peripheral portion, the wiring exposed by removal of the insulating film; forming a hole in from the rear surface of the substrate to reach the thin resist film; forming a space between the metal film and the insulating film by dissolving the thin resist film with a solvent applied through the hole; closing the opening of the hole at the rear surface of the substrate; heating the metal film to make the metal film discharge the gas, thereby expanding the metal film to such an extent that a space produced between the metal film and the gate electrode of the FET does not cause parasitic capacitance between the metal film and the gate electrode.

REFERENCES:
patent: 4016643 (1977-04-01), Pucel et al.
patent: 4992764 (1991-02-01), Ayasli
patent: 5063177 (1991-11-01), Geller et al.
patent: 5521123 (1996-05-01), Komatsu et al.
patent: 5543364 (1996-08-01), Stupian et al.
patent: 5548099 (1996-08-01), Cole, Jr. et al.
patent: 5559046 (1996-09-01), Oishi et al.

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