Method for fabricating microwave heterojunction bipolar transist

Details Method for fabricating microwave heterojunction bipolar transist Method for fabricating microwave heterojunction bipolar transist

1993-11-30

1995-02-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437126, 437133, 148DIG72, H01L 21265

Patent

active

053895541

ABSTRACT:
In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Al.sub.x Ga.sub.1-x As, where x>0.4, abutting a base layer 8.

REFERENCES:
patent: 4728616 (1988-03-01), Ankri et al.
patent: 4751195 (1988-06-01), Kawai
patent: 4996166 (1991-02-01), Ohshima
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Guan-bo Gao, et al., "emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors", IEEE Transactions on Electron Devices, vol. 38, No. 2, pp. 185-196, Feb. 1991.
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S. M. Sze, Physics of Semiconductor Devices, second edition, pp. 169-175.
"500mA AlGaAs/GaAs Power Heterojunction Bipolar Transistor", Electronics Letters, vol. 25, No. 21, pp. 1447-1448, Oct. 12, 1989.

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