Method for fabricating metal silicide

Details Method for fabricating metal silicide Method for fabricating metal silicide

2005-04-26

2005-04-26

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

C427S255700, C427S255392, C427S255393

Reexamination Certificate

active

06884473

ABSTRACT:
A method for fabricating a metal silicide layer includes forming a dielectric layer on a substrate, followed by forming a polysilicon material conductive layer on the dielectric layer. An adhesion layer is then formed on the conductive layer, wherein the adhesion layer is a nitrogen rich layer or a nitrogen ion implanted layer. A metal silicide layer is then formed on the adhesion layer. The adhesion between the metal silicide layer and the conductive layer is more desirable due the adhesion layer.

REFERENCES:
patent: 4557037 (1985-12-01), Hanoka et al.
patent: 4619034 (1986-10-01), Janning
patent: 5804249 (1998-09-01), Sukharev et al.
patent: 5888588 (1999-03-01), Nagabushnam et al.
patent: 6372598 (2002-04-01), Kang et al.

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