Method for fabricating low resistance contacts of semiconductor

Details Method for fabricating low resistance contacts of semiconductor Method for fabricating low resistance contacts of semiconductor

1993-12-27

1995-02-21

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437195, 437201, 748DIG19, H01L 21283

Patent

active

053915216

ABSTRACT:
A method for fabricating contacts of a semiconductor device capable of achieving a reduced contact resistance by using a material, such as TiSi.sub.2, exhibiting a low potential barrier to a N.sup.+ diffusion layer for a contact for the N.sup.+ diffusion layer and a material, such as PtSi, exhibiting a low potential barrier to a P.sup.+ diffusion layer for a contact for the P.sup.+ diffusion layer and performing two independent masking works respectively for the N.sup.+ diffusion layer and the P.sup.+ diffusion layer.

REFERENCES:
patent: 5234863 (1993-08-01), Hosaka
Wolf, S., Silicon Processing, Lattice Press, vol. II, 1990, pp. 84-94, 127-129, 144-150.

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