Method for fabricating low leakage substrate plate trench DRAM c

Details Method for fabricating low leakage substrate plate trench DRAM c Method for fabricating low leakage substrate plate trench DRAM c

1994-11-10

1996-01-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

054828830

ABSTRACT:
Methods for fabricating low leakage trenches for Dynamic Random Access Memory (DRAM) cells and the devices formed thereby are disclosed. In one embodiment of the present invention, the method includes forming a diffusion ring surrounding an upper portion of the trench. In another embodiment, a portion of the diffusion ring extends to the surface of a substrate. The diffusion ring can be formed by outdiffusing a dopant from a doped material deposited within the trench. In a further embodiment, the present method includes forming an insulating ring surrounding an upper portion of the trench. The insulating ring can be formed by thermal oxidation or by etching a sidewall shallow trench and depositing an insulating material therein. In another embodiment, a portion of the insulating ring extends to the surface of the substrate.

REFERENCES:
patent: 4784969 (1988-11-01), Nitayama
patent: 4830981 (1989-05-01), Baglee et al.
IBM TDB, vol. 31, No. 7, Dec. 1988 pp. 409-414 High Density Memory Cell Structure with two access transistors.

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