Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Patent
1996-10-16
1998-07-21
Sikes, William L.
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
349 43, 349187, G02F 11343, G02F 1136, G02F 113
Patent
active
057841314
ABSTRACT:
Method for fabricating a liquid crystal display, is disclosed, including the steps of forming a first semiconductor layer in a thin film transistor region on a substrate and forming a second semiconductor layer in a storage capacitor region on the substrate, forming a gate insulating film on the first, and second semiconductor layers and forming a gate electrode over the first semiconductor layer in the thin film transistor region, injecting impurity ions into entire surface of the substrate using the gate electrode as a mask in forming a source region and a drain region in the first semiconductor layer, forming a first interlayer insulating film on entire surface of the substrate including the gate electrode and forming a first contact hole such that the first contact hole exposes the source region, forming a data line on a part of the first interlayer insulating film such that the data line is connected to the source region through the first contact hole, forming a second interlayer insulating film on entire surface of the substrate including the data line and forming second, third contact holes such that the second, and third contact holes expose the gate insulating film on the second semiconductor layer and the drain region respectively and forming a pixel electrode on the second interlayer insulating film such that the pixel electrode is connected to the gate insulating film on the second semiconductor layer and the drain region through the second and third contact holes respectively and forming a protection film on entire surface including the pixel electrode, whereby a numerical aperture can be improving allowing improvement of picture quality.
REFERENCES:
patent: 4648691 (1987-03-01), Oguchi et al.
Han Kyung-Seob
Kim Hong-Gyu
Lee Ho-Young
LG Semicon Co. Ltd.
Malinowski Walter
Sikes William L.
White John P.
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