Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-04-08
2008-04-08
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S059000, C438S070000, C438S149000, C438S151000
Reexamination Certificate
active
11172233
ABSTRACT:
A method for fabricating a color-filter on transistor (COT) type LCD device, to improve the yield by simplifying the fabrication process with diffraction exposure, which includes the steps of forming a gate line, a gate electrode, a gate pad and a data pad on a substrate; depositing a gate insulating layer and an active layer; forming a data line intersecting the gate line to define a unit pixel region, source and drain electrode on the active layer, and first and second connection conductive layers forming an insulating interlayer on the remaining portions except the first and second connection conductive layers and the drain electrode; forming a color filter layer and a black matrix layer on the insulating interlayer; forming an overcoat layer on the remaining portions of the color filter layer except the first and second connection conductive layers and the drain electrode.
REFERENCES:
patent: 2003/0136971 (2003-07-01), Rhee et al.
patent: 2004/0018655 (2004-01-01), Song
patent: 2004/0109101 (2004-06-01), Kim et al.
patent: 2001-10743 (2001-02-01), None
patent: 2004-50235 (2004-06-01), None
Park Seung Ryull
Yu Sang Hee
Jefferson Quovaunda
LG. Philips LCD. Co., Ltd
Toledo Fernando L.
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